The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2026

Filed:

Apr. 20, 2023
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Thomas James Soldi, West Simsbury, CT (US);

Joseph Olson, Beverly, MA (US);

Morgan Evans, Manchester, MA (US);

Ludovic Godet, Sunnyvale, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/00 (2006.01); F21V 8/00 (2006.01); G02B 5/18 (2006.01);
U.S. Cl.
CPC ...
G02B 6/0065 (2013.01); G02B 5/1857 (2013.01); G02B 6/0016 (2013.01); G02B 6/0036 (2013.01);
Abstract

Embodiments described herein relate to a method of using an apparatus for forming waveguides. The method includes positioning a substrate at a first rotation angle, exposing the substrate to an ion beam, forming first partial trenches defined by adjacent angled device structures with the first device angle, rotating the substrate to a second rotation angle, exposing the substrate to the ion beam, etching the first partial trenches, and repeating the method from about 1 cycle to about 100 cycles to form a plurality of trenches defined by adjacent angled device structures. The first rotation angle is selected to form one or more angled device structures with a first device angle relative to a vector parallel to the substrate. The ion beam is configured to contact the substrate at a beam angle ϑ relative to a surface normal of the substrate.


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