The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2026
Filed:
Aug. 06, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Jin Cai, Hsinchu, TW;
Sheng-Kai Su, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method includes depositing a dielectric layer over a substrate, forming carbon nanotubes on the dielectric layer, forming a dummy gate stack on the carbon nanotubes, forming gate spacers on opposing sides of the dummy gate stack, and removing the dummy gate stack to form a trench between the gate spacers. The carbon nanotubes are exposed to the trench. The method further includes etching a portion of the dielectric layer underlying the carbon nanotubes, with the carbon nanotubes being suspended, forming a replacement gate dielectric surrounding the carbon nanotubes, and forming a gate electrode surrounding the replacement gate dielectric.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile