The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2026
Filed:
Mar. 09, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chun-Fai Cheng, Hong Kong, TW;
Chang-Miao Liu, Hsinchu City, TW;
Ming-Lung Cheng, Kaohsiung County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method includes forming a semiconductor fin protruding from a substrate, forming a dummy gate structure across the semiconductor fin, recessing the semiconductor fin in a region adjacent the dummy gate structure to form a recess, growing an epitaxial feature in the recess to fully covers an end of the semiconductor fin that is otherwise exposed in the recess, trimming the epitaxial feature to reduce a width of the epitaxial feature to expose again a portion of the end of the semiconductor fin in the recess, depositing a dielectric layer on the epitaxial feature and in physical contact with the exposed portion of the end of the semiconductor fin, and replacing the dummy gate structure with a metal gate structure.