The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2026
Filed:
May. 15, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yi-Syuan Siao, Changhua City, TW;
Chien-Yu Lin, Yilan County, TW;
Meng-Han Chou, Hsinchu City, TW;
Su-Hao Liu, Chiayi County, TW;
Chi On Chui, Hsinchu City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method for fabricating an integrated circuit device includes forming first epitaxial stack comprising a first sacrificial layer and a first channel layer over a substrate; forming a second epitaxial stack comprising a second sacrificial layer and a second channel layer over the first epitaxial stack; etching a recess in the first and second epitaxial stacks, wherein the recess exposes end surfaces of the first and second channel layers; performing a first ion implantation process to form a first lightly doped region; performing a second ion implantation process to form a second lightly doped region, wherein a tilt angle of the second ion implantation process is greater than a tilt angle of the first ion implantation process; forming first and second source/drain epitaxial features in the recess; and replacing the first and the second sacrificial layers with a high-k/metal gate structure.