The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2026

Filed:

Jul. 18, 2023
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Bartlomiej J. Pawlak, Leuven, BE;

Judson R. Holt, Ballston Lake, NY (US);

Assignee:

GLOBALFOUNDRIES U.S. Inc, Malta, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/43 (2025.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 30/43 (2025.01); H10D 30/014 (2025.01); H10D 30/6735 (2025.01); H10D 62/121 (2025.01); H10D 64/018 (2025.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to nanosheet transistor structures and methods of manufacture. The structure includes: a plurality of stacked semiconductor nanosheets over a semiconductor substrate; a plurality of gate structures surrounding individual nanosheets of the plurality of semiconductor nanosheets; an inner sidewall spacer adjacent each of the plurality of gate structures; and corner spacers under the plurality of stacked semiconductor nanosheets.


Find Patent Forward Citations

Pawlak, Bartlomiej. (2026). Nanosheet structures with corner spacer (U.S. Patent No. 12672300). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12672300

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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