Methods used in forming a memory array comprising strings of memory cells comprising forming undoped semiconductive material into a void-space

Abstract

A memory array comprising strings of memory cells comprises conductor tier comprising conductor material. Laterally-spaced memory blocks individually comprising a vertical stack comprises alternating insulative tiers and conductive tiers. Channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Conducting material of a lower of the conductive tiers directly electrically couples together the channel material of individual of the channel-material strings and the conductor material of the conductor tier. The conducting material in the lower conductive tier comprises upper conductively-doped semiconductive material, lower conductively-doped semiconductive material, and intermediate material vertically there-between. Other embodiments, including method, are disclosed.