The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2026
Filed:
Apr. 18, 2024
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Wenwen Dong, Wuhan, CN;
Yahai Liu, Wuhan, CN;
Wei Huang, Wuhan, CN;
Weijun Wan, Wuhan, CN;
Jianjie Li, Wuhan, CN;
Feihao Cen, Wuhan, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Abstract
The present disclosure relates to methods and devices for performing a read operation in a memory. In one example, a method for operating a memory device includes performing sensing operations on memory cells of the memory device based on at least one voltage or at least one develop time. The memory cells are coupled to a word line. The method further includes identifying a read offset based on results of the sensing operations. The read offset can include a read voltage selected from the at least one voltage, or a read develop time selected from the at least one develop time. The method further includes storing the read offset in the memory device to be directly applied in a read operation on the memory cells.