The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2026

Filed:

Mar. 21, 2023
Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Naoki Kobayashi, Joetsu, JP;

Kanata Takizawa, Joetsu, JP;

Ryo Mitsui, Joetsu, JP;

Toshiharu Yano, Joetsu, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C08L 83/04 (2006.01); C08K 3/22 (2006.01); C08L 83/06 (2006.01); G03F 7/004 (2006.01); G03F 7/06 (2006.01); G03F 7/11 (2006.01); G03F 7/20 (2006.01); H10P 50/00 (2026.01); H10P 50/26 (2026.01); H10P 50/28 (2026.01); H10P 76/20 (2026.01); H10P 76/40 (2026.01); C08G 77/14 (2006.01);
U.S. Cl.
CPC ...
C08L 83/04 (2013.01); C08K 3/22 (2013.01); C08L 83/06 (2013.01); G03F 7/0041 (2013.01); G03F 7/063 (2013.01); G03F 7/11 (2013.01); G03F 7/202 (2013.01); G03F 7/2024 (2013.01); H10P 50/268 (2026.01); H10P 50/283 (2026.01); H10P 50/287 (2026.01); H10P 50/692 (2026.01); H10P 50/695 (2026.01); H10P 50/696 (2026.01); H10P 50/71 (2026.01); H10P 50/73 (2026.01); H10P 76/2043 (2026.01); H10P 76/405 (2026.01); H10P 76/4085 (2026.01); H10P 76/4088 (2026.01); C08G 77/14 (2013.01);
Abstract

The present invention is a composition for forming a silicon-containing metal hard mask, including: (A) a metal oxide nanoparticle; (B) a thermally crosslinkable polysiloxane (Sx) having no aromatic-ring-containing organic group; and (C) a solvent. This provides a composition for forming a silicon-containing metal hard mask that has a high effect of inhibiting collapse of an ultrafine pattern in a multilayer resist method, that can form a resist pattern having excellent LWR, that has more excellent dry etching resistance and wet removability than a conventional silicon-containing underlayer film material, and that has more excellent filling ability than a conventional metal hard mask material.


Find Patent Forward Citations

Loading…