The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

May. 12, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Hung-Pin Chang, New Taipei City, TW;

Der-Chyang Yeh, Hsin-Chu, TW;

Wei-Cheng Wu, Hsinchu City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H10W 20/20 (2026.01); H10W 20/42 (2026.01); H10W 74/01 (2026.01); H10W 74/10 (2026.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10W 74/141 (2026.01); H10W 20/20 (2026.01); H10W 20/42 (2026.01); H10W 74/014 (2026.01); H10W 90/00 (2026.01); H10W 90/792 (2026.01);
Abstract

A semiconductor device and a forming method thereof are provided. The semiconductor device includes an integrated circuit (IC) die and an encapsulant. The IC die includes a semiconductor substrate and an interconnect structure connected to the semiconductor substrate, the semiconductor substrate includes a first ledge, and the interconnect structure includes a second ledge. The encapsulant extends along the first ledge of the first semiconductor substrate and the second ledge of the first interconnect structure.


Find Patent Forward Citations

Loading…