The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Sep. 06, 2023
Globalfoundries U.s. Inc., Malta, NY (US);
Ian Mccallum-Cook, Burlington, VT (US);
Mark Levy, Williston, VT (US);
Zhong-Xiang He, Essex Junction, VT (US);
GlobalFoundries U.S. Inc., Malta, NY (US);
Abstract
Structures including a wide band-gap semiconductor layer stack and methods of forming such structures. The structure comprises a layer stack on a substrate and a first dielectric layer on the layer stack. The layer stack includes semiconductor layers that comprise a wide band-gap semiconductor material. A seal ring includes a trench that penetrates through the first dielectric layer and the layer stack to the substrate, a second dielectric layer that lines the trench, and a conductor layer including first and second portions inside the trench. The trench surrounds portions of the layer stack and the first dielectric layer. The second dielectric layer includes a first portion disposed between the first portion of the conductor layer and the portion of the layer stack, and the second dielectric layer includes a second portion disposed between the second portion of the conductor layer and the portion of the first dielectric layer.