The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Aug. 30, 2021
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Yung-Tsun Liu, Taipei City, TW;
Chao-Hung Wan, Taichung City, TW;
Kuang-Wei Cheng, Hsinchu City, TW;
Chih-Tsung Lee, Hsinchu City, TW;
Chyi-Tsong Ni, Hsinchu City, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A chamber of a semiconductor fabrication facility may include a vent port diffuser. The vent port diffuser may include a first tube member configured to couple the vent port diffuser to a vent port of the chamber. The vent port diffuser may include a second tube member coupled to the first tube member. The second tube member may comprise a plurality of openings spaced along a length of the second tube member, with the plurality of openings configured to receive a fluid from the chamber. Based on the semiconductor fabrication facility including the vent port diffuser, the chamber may be configured to provide an improved flow field of a fluid within the chamber. In this way, the vent port diffuser may reduce defects of semiconductor devices transported through the chamber that might otherwise be caused by contaminants.