Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic apparatus

Abstract

An object is to provide a solid-state imaging device, a manufacturing method of a solid-state imaging device, and an electronic apparatus that are capable of reducing tensile stress produced between a covering film and a semiconductor element which is joined to a solid-state imaging element and which is covered with the covering film, and that allow transistors to be provided near chip ends. There is provided a configuration including a solid-state imaging element, a semiconductor element laminated on the solid-state imaging element and electrically connected to the solid-state imaging element, and a covering film that covers a non-lamination portion that is a region where the semiconductor element is not laminated, in a laminated surface of the solid-state imaging element where the semiconductor element is laminated, and further covers a peripheral side surface of the semiconductor element and forms a clearance between the peripheral side surface of the semiconductor element and the covering film. This configuration can reduce tensile stress produced at chip ends of the semiconductor element when a covering film such as an oxide film is formed on the non-lamination portion of the solid-state imaging element and on an entire surface including the peripheral side surface of the semiconductor element on a side opposite to a lamination surface.