The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Oct. 10, 2023
Aeluma, Inc., Goleta, CA (US);
Michael Mcgivney, Goleta, CA (US);
Jonathan Klamkin, Goleta, CA (US);
Bowen Song, Goleta, CA (US);
Bei Shi, Goleta, CA (US);
Simone Tommaso Suran Brunelli, Goleta, CA (US);
Aeluma, Inc., Goleta, CA (US);
Abstract
A monolithic focal plane array (FPA) device and method of fabrication. The method can include forming monolithic photodetectors or FPAs by heteroepitaxial growth of III-V PINs, APDs, or other photodetector devices in etched recesses of a Si-based read-out integrated circuit (ROIC) wafer. In a single-color device example, a wavelength configuring buffer layer and photodetector are grown within the etched recesses using compound semiconductor materials to enable infrared detection at desired wavelength(s). Depending on the application, this growth can be done on a graded compliant buffer layer and/or a selectively transparent buffer layer. And, semiconductor detectors can be incorporated to detect visible and NIR wavelengths in a dual-color device example. Further, the resulting devices can be configured as pixels in a sensor array device coupled to the ROIC device.