The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Oct. 30, 2023
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
GlobalFoundries Singapore Pte. Ltd., Singapore, SG;
Abstract
Structures for a single-photon avalanche diode and methods of forming a structure for a single-photon avalanche diode. The structure comprises a semiconductor layer on a top surface of a semiconductor substrate, a light-absorbing layer on a first portion of the semiconductor layer, a dielectric layer on a second portion of the semiconductor layer, and a doped region in the semiconductor substrate adjacent to the semiconductor layer. The structure further comprises a deep trench isolation structure that penetrates through the dielectric layer and the second portion of the semiconductor layer to the doped region. The deep trench isolation structure includes a conductor layer and a dielectric liner, the dielectric liner includes a portion between the conductor layer and the semiconductor layer, and the conductor layer is connected to the first doped region.