The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Sep. 13, 2023
United Semiconductor (Xiamen) Co., Ltd., Xiamen, CN;
Wen Wei Wang, Shamen City, CN;
Xiang Xiang Zhou, Shamen City, CN;
Xiang Wang, Shamen City, CN;
Hailong Gu, Singapore, SG;
Wen Yi Tan, Xiamen, CN;
United Semiconductor (Xiamen) Co., Ltd., Xiamen, CN;
Abstract
A method for fabricating a semiconductor device includes the steps of first providing a substrate having a first transistor region and a second transistor region and then forming a first gate structure on the first transistor region and a second gate structure on the second transistor region, in which the first gate structure includes a first hard mask, the second gate structure includes a second hard mask, and the first hard mask and the second hard mask have different thicknesses. Next, a patterned mask is formed around the first gate structure and the second gate structure, and then part of the first hard mask is removed.