The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Nov. 24, 2021
Fuji Electric Co., Ltd., Kawasaki, JP;
Motoyoshi Kubouchi, Matsumoto-city, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
Provided is a semiconductor apparatus including: a semiconductor substrate having an upper surface and a lower surface and containing a bulk donor; and a hydrogen increasing portion in which a hydrogen chemical concentration monotonically increases from the upper surface toward the lower surface. The hydrogen increasing portion is provided over 30% or more of a thickness of the semiconductor substrate in a depth direction. A donor concentration in the hydrogen increasing portion is higher than a bulk donor concentration. The semiconductor apparatus can be manufactured by implanting hydrogen ions from the upper surface of the semiconductor substrate to a predetermined first implantation position inside the semiconductor substrate, grinding the lower surface of the semiconductor substrate to remove a part of a region where hydrogen exists, and performing heat treatment on the semiconductor substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile