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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12666661 B1

PDFFull Text
Date of Patent:
Jun. 23, 2026

Filed:

Jan. 12, 2023

Semiconductor device having gate insulating layer in trench and on upper surface of substrate, channel layer on gate insulating layer, and spaced-apart source and drain electrodes on channel layer

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Junyoung Kwon, Suwon-si, KR;

Minsu Seol, Suwon-si, KR;

Keunwook Shin, Suwon-si, KR;

Minseok Yoo, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Wael M Fahmy

Assistant Examiner:

Alice W Tang

Int. Cl.
CPC ...
H10D 48/36 (2025.01); H01L 21/02 (2006.01); H10D 30/67 (2025.01); H10D 62/80 (2025.01); H10D 64/23 (2025.01); H10D 99/00 (2025.01);
U.S. Cl.
CPC ...
H10D 48/362 (2025.01); H01L 21/02568 (2013.01); H01L 21/0262 (2013.01); H10D 30/6728 (2025.01); H10D 30/6757 (2025.01); H10D 62/80 (2025.01); H10D 64/252 (2025.01); H10D 99/00 (2025.01);
Abstract

A semiconductor device includes a substrate including a gate electrode therein, a trench penetrating the gate electrode and arranged in the substrate, a gate insulating layer in the trench and an upper surface of the substrate, a channel layer on the gate insulating layer and including a two-dimensional (2D) semiconductor material, and a source electrode and a drain electrode, which are spaced apart from each other on the channel layer.

Find Patent Forward Citations

Kwon, Junyoung. (2026). Semiconductor device having gate insulating layer in trench and on upper surface of substrate, channel layer on gate insulating layer, and spaced-apart source and drain electrodes on channel layer (U.S. Patent No. 12666661). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12666661

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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