The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Jul. 21, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Dian-Sheng Yu, Hsinchu, TW;
Jhon-Jhy Liaw, Hsinchu, TW;
Kuo-Hua Pan, Hsinchu, TW;
Chia-He Chung, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device is provided. The semiconductor device includes a first pull-down transistor, a first pull-up transistor, a second pull-down transistor, a second pull-up transistor, a first pass gate transistor, a second pass gate transistor, a first bit line, a second bit line, a word line and a voltage supply line. The first pull-down transistor and the first pull-up transistor form a first inverter. The second pull-down transistor and the second pull-up transistor form a second inverter. An input of the first inverter is connected to an output of the second inverter through a first node butted contact. The first node butted contact includes a metal contact directly contacted a gate of the first pull-down transistor and the first pull-up transistor and directly contacted a source/drain of the second pull-down transistor, the second pull-up transistor and the second pass gate transistor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile