The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

Jun. 02, 2023
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Jian Huang, Boise, ID (US);

Zhenming Zhou, San Jose, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/32 (2006.01); G11C 29/12 (2006.01);
U.S. Cl.
CPC ...
G11C 29/32 (2013.01); G11C 29/1201 (2013.01);
Abstract

A method includes determining, for a plurality of memory dice, binning information relating to quality characteristics of each of the plurality of memory dice. The method further includes performing a select gate scan to determine a first threshold voltage and a first threshold voltage window of each of the plurality of memory dice, and, based on the determined quality characteristics of each of the plurality of memory dice, perform an erase and program operation to set a second threshold voltage with a second threshold voltage window of a subset of memory dice among the plurality of memory dice where the second threshold voltage window is greater than the first threshold voltage window.


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Quick Actions:

Huang, Jian. (2026). Memory sub-system threshold voltage modification operations (U.S. Patent No. 12665043). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12665043

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