Memory devices and operating methods thereof, memory systems, and electronic devices

Abstract

Examples of the present disclosure provide a memory device and an operating method thereof, a memory system, and an electronic device. The memory device comprises: a memory cell array; and peripheral circuit coupled to the memory cell array through word lines and bit lines and configured to: apply a first read voltage to a selected word line; charge the sense nodes corresponding to the memory cells coupled to the selected word line; divide the memory cells coupled to the selected word line into multiple memory cell groups to perform sensing operations, and the sensing operation includes: controlling the multiple sense nodes corresponding to the multiple memory cells in the memory cell group to discharge twice; and obtain a first counted number of each memory cell group based on each discharge result of the multiple sense nodes corresponding to each memory cell group.