The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Aug. 16, 2024
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Xingwei Tang, Wuhan, CN;
Guangchang Ye, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
Examples of the present disclosure provide a memory device, memory system, memory controller and operating method thereof. The memory device includes a memory cell with multiple storage bits, a preset number of the memory cells form one code word, and the multiple storage bits correspond to multiple pages respectively. The multiple stages include a first stage and a second stage. The peripheral circuit of the memory device is configured to: obtain a predicted valley voltage in the first stage in accordance with the corresponding first result at the target read voltage in the first stage; obtain the predicted valley voltage in the second stage in accordance with the predicted valley voltage in the first stage; and perform a first read operation on at least one code word with the predicted valley voltage in the first stage and the predicted valley voltage in the second stage.