The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Dec. 22, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yu-Der Chih, Hsin-Chu, TW;
Chia-Fu Lee, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method for identifying an IM state of MRAM cell writes includes providing a plurality of MRAM cells and partitioning the plurality of MRAM cells into a plurality of groups including a first group and a second group. A first MRAM cell of the first group is written from a first state to a second state and a second MRAM cell of the second group is written from the first state to the second state. The writing of the first MRAM cell is verified, including comparing a first read current of the first MRAM cell to a first reference value. The writing of the second MRAM cell is verified, including comparing a second read current of the second MRAM cell to a second reference value.