The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Sep. 22, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Yeongkwon Ko, Suwon-si, KR;

Unbyoung Kang, Suwon-si, KR;

Soyeon Kwon, Suwon-si, KR;

Chungsun Lee, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 23/29 (2006.01); H01L 25/065 (2023.01); H10B 80/00 (2023.01);
U.S. Cl.
CPC ...
H01L 23/3178 (2013.01); H01L 23/291 (2013.01); H01L 24/08 (2013.01); H01L 24/16 (2013.01); H01L 24/94 (2013.01); H01L 24/96 (2013.01); H01L 25/0652 (2013.01); H01L 25/0657 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/94 (2013.01); H01L 2224/96 (2013.01); H01L 2225/06524 (2013.01); H01L 2225/06568 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1435 (2013.01); H10B 80/00 (2023.02);
Abstract

Provided is a semiconductor package including a first semiconductor device including a first semiconductor substrate, a first interconnect structure on the first semiconductor substrate, and a trench extending into the first interconnect structure and a portion of the first semiconductor substrate, a second semiconductor device on the first semiconductor device, and a cover insulating layer on the first semiconductor device and a side surface of the second semiconductor device, the cover insulating layer including a first portion filling the trench included in the first semiconductor device and contacting the first semiconductor substrate.


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