The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Sep. 30, 2022
Applicant:

Advanced Semiconductor Engineering, Inc., Kaohsiung, TW;

Inventors:

Jhao-Cheng Chen, Kaohsiung, TW;

Huang-Hsien Chang, Kaohsiung, TW;

Wen-Long Lu, Kaohsiung, TW;

Shao Hsuan Chuang, Kaohsiung, TW;

Ching-Ju Chen, Kaohsiung, TW;

Tse-Chuan Chou, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 72/20 (2026.01); H10W 72/00 (2026.01); H10W 72/90 (2026.01); H10W 80/00 (2026.01);
U.S. Cl.
CPC ...
H10W 72/20 (2026.01); H10W 72/012 (2026.01); H10W 72/01961 (2026.01); H10W 72/90 (2026.01); H10W 72/931 (2026.01); H10W 80/016 (2026.01);
Abstract

A semiconductor device and method for manufacturing the same are provided. The method includes providing a first substrate. The method also includes forming a first metal layer on the first substrate. The first metal layer includes a first metal material. The method further includes treating a first surface of the first metal layer with a solution including an ion of a second metal material. In addition, the method includes forming a plurality of metal particles including the second metal material on a portion of the first surface of the first metal layer.


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