The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Dec. 21, 2022
Applicant:

Amkor Technology Singapore Holding Pte. Ltd., Singapore, SG;

Inventors:

Sang Hyun Jin, Incheon, KR;

Young Jin Kang, Gwangju, KR;

Jin Suk Jeong, Incheon, KR;

Yun Kyung Jeong, Incheon, KR;

Hyun Goo Cha, Incheon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/31 (2006.01); H10W 70/05 (2026.01); H10W 70/65 (2026.01); H10W 70/685 (2026.01); H10W 74/01 (2026.01); H10W 74/10 (2026.01);
U.S. Cl.
CPC ...
H10W 70/65 (2026.01); H10W 70/05 (2026.01); H10W 70/093 (2026.01); H10W 70/685 (2026.01); H10W 74/016 (2026.01); H10W 74/117 (2026.01);
Abstract

In one example, an electronic device comprises a substrate having a top side and a bottom side, an electronic component over the top side of the substrate, and an encapsulant over the top side of the substrate. The substrate comprises a dielectric structure comprising a first dielectric layer and a conductive structure in the dielectric structure and comprising a first conductor tier in the first dielectric layer comprising a first trace exposed from a top side of the first dielectric layer and partially extending through the first dielectric layer and a first via exposed from the top side of the first dielectric layer and a bottom side of the first dielectric layer and extending from the top side of the first dielectric layer to the bottom side of the first dielectric layer. The first trace and the first via have non-stepped sidewalls extending vertically. Other examples are also disclosed herein.


Find Patent Forward Citations

Jin, Sang. (2026). Semiconductor devices and methods of manufacturing semiconductor devices (U.S. Patent No. 12660653). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12660653

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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