The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Sep. 28, 2022
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Shao Ming Koh, Tigard, OR (US);

Patrick Morrow, Portland, OR (US);

June Choi, Portland, OR (US);

Sukru Yemenicioglu, Portland, OR (US);

Nikhil Jasvant Mehta, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10W 20/42 (2026.01); H10W 20/00 (2026.01); H10W 20/20 (2026.01); H10W 20/43 (2026.01);
U.S. Cl.
CPC ...
H10W 20/42 (2026.01); H10W 20/033 (2026.01); H10W 20/056 (2026.01); H10W 20/20 (2026.01); H10W 20/43 (2026.01);
Abstract

An IC device includes a metal layer that includes staggered metal lines. The metal lines are in two or more levels along a direction. There may be one or more metal lines in each level. At least some of the metal lines are aligned along the direction so that widths of the metal lines may be maximized for a given total width of the metal layer. The alignment of the metal lines may be achieved through DSA of a diblock copolymer. The metal layer may be connected to vias in two or more levels. The vias may be also connected to another metal layer or a semiconductor device in a FEOL section of the IC device. A via and the metal line connected to the via may be formed through a same recess and deposition process to eliminate interface between the via and metal line.


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