The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Jan. 09, 2023
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chung-Ting Ko, Kaohsiung City, TW;

Sung-En Lin, Xionglin Township, TW;

Chi On Chui, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 10/00 (2026.01); B82Y 10/00 (2011.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 30/69 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 62/822 (2025.01); H10D 64/01 (2025.01); H10W 10/17 (2026.01);
U.S. Cl.
CPC ...
H10W 10/014 (2026.01); H10D 30/014 (2025.01); H10D 64/017 (2025.01); H10W 10/17 (2026.01);
Abstract

A method includes depositing a first material on a sidewall surface of a recess in a substrate, wherein the first material is a conductive material; after depositing the first material, depositing a second material on a bottom surface of the recess using a plasma-assisted deposition process; and after depositing the second material, removing the first material.


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