The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
May. 23, 2023
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Du Zhang, Albany, NY (US);
Scott Lefevre, Albany, NY (US);
Jeffrey Shearer, Albany, NY (US);
Peter Biolsi, Albany, NY (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 50/24 (2026.01); H10P 50/28 (2026.01); H10W 20/00 (2026.01);
U.S. Cl.
CPC ...
H10P 50/242 (2026.01); H10P 50/287 (2026.01); H10W 20/056 (2026.01); H10W 20/076 (2026.01);
Abstract
A method is provided. The method includes etching a substrate to form a recess in the substrate through a plurality of stages. A first one of the plurality of stages forms an inhibitor layer lining an initial portion of the recess based on first etchant radicals. A second one of the plurality of stages exposes the initial portion of the recess based on ions. A third one of the plurality of stages extends the initial portion of the recess based on second etchant radicals.