The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Sep. 19, 2022
Denso Corporation, Kariya-city, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Mirise Technologies Corporation, Nisshin, JP;
Hamamatsu Photonics K.k., Hamamatsu, JP;
Kozo Kato, Nisshin, JP;
Daisuke Kawaguchi, Hamamatsu, JP;
DENSO CORPORATION, Kariya-city, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
MIRISE Technologies Corporation, Nisshin, JP;
HAMAMATSU PHOTONICS K.K., Hamamatsu, JP;
Abstract
A method for manufacturing a semiconductor device, includes: applying a laser beam to a plane extending at a predetermined depth in a semiconductor substrate from a second main surface side of the semiconductor substrate opposite to a first main surface side on which a device structure including a channel is formed; and peeling off a device layer including the device structure from the semiconductor substrate along the plane applied with the laser beam. In the applying of the laser beam, the laser beam is applied so that a power density is lower in a region corresponding to the channel in a thickness direction of the semiconductor substrate than in the other region, in the plane extending at the predetermined depth in the semiconductor substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile