The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Aug. 02, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Shahaji B. More, Hsinchu, TW;
Chien Lin, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10P 14/60 (2026.01); H10D 64/01 (2025.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10P 14/6682 (2026.01); H10D 64/017 (2025.01); H10D 84/013 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01);
Abstract
A method for forming a semiconductor device structure is described. The method includes forming a first semiconductor layer over a substrate in a processing chamber and performing a purge process. The purge process includes flowing a chlorine-containing gas into the processing chamber. The method further includes forming a second semiconductor layer over the first semiconductor layer, and an interface region is formed between the first and second semiconductor layers.