The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Mar. 30, 2022
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Hiroshi Hashigami, Annaka, JP;
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Abstract
A method producing a laminate with a semiconductor film that has a corundum crystal structure, includes the steps of mounting a substrate on a stage; heating the substrate, atomizing a raw material solution for film deposition, forming a gaseous mixture by mixing the atomized raw material solution for film deposition and carrier gas; and forming the film deposition by supplying the gaseous mixture to the substrate, wherein a surface roughness Ra of a contact surface with the substrate on the stage and the contact surface with the stage on the substrate is 0.5 μm or less. The method produces the laminate capable of stably forming a thick film of a corundum crystal thin film (the semiconductor film having a corundum crystal structure) with excellent crystal orientation and high quality.