The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Mar. 10, 2022
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Xiaoxin Xu, Beijing, CN;
Wenxuan Sun, Beijing, CN;
Jie Yu, Beijing, CN;
Woyu Zhang, Beijing, CN;
Danian Dong, Beijing, CN;
Jinru Lai, Beijing, CN;
Xu Zheng, Beijing, CN;
Dashan Shang, Beijing, CN;
Abstract
A three-dimensional reservoir based on three-dimensional volatile memristors and a method for manufacturing the same. In the three-dimensional reservoir, a memory layer, a select layer, and an electrode layer in each via form a memristor which is a reservoir unit. The three-dimensional reservoir is formed based on a stacking structure and multiple vias. The three-dimensional reservoir is constructed by using virtual nodes generated from dynamic characteristics of the three-dimensional memristors. An interfacial memristor is first constructed, and its volatility is verified through electric tests. A vertical three-dimensional array is manufactured based on the volatile memristor. A dynamic characteristic of the memristor is adjusted through a Schottky barrier. Different layers in the three-dimensional reservoir correspond to different reservoirs, which are constructed by controlling memristors in the different layers, respectively.