The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Aug. 01, 2022
Applicant:
United Microelectronics Corp., Hsin-Chu City, TW;
Inventor:
Hui-Lin Wang, Taipei City, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10N 50/10 (2023.01); H10B 61/00 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/10 (2023.02); H10B 61/22 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02);
Abstract
A semiconductor device includes a bottom electrode on a substrate, a magnetic tunneling junction (MTJ) on the bottom electrode, a first cap layer on the MTJ, a second cap layer on the first cap layer, a block layer on the second cap layer, and a top electrode on the block layer. Preferably, the block layer could be made of Co-based alloy or metal nitride, in which the Co-based alloy could further include CoW alloy whereas the metal nitride could include WN.