The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Mar. 29, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Shahaji B. More, Hsinchu, TW;
Yi Hsuan Lo, Yunlin, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes a substrate, a first FET, and a second FET. The first FET includes first and second fin structures disposed on first and second fin bases, respectively, a first S/D region disposed on the first and second fin bases and in contact with side surfaces of the first and second fin structures, and a first pair of spacers disposed on opposite sidewalls of the first S/D region. The second FET includes third and fourth fin structures disposed on third and fourth fin bases, respectively, a second S/D region disposed on the third and fourth fin structures, and a second pair of spacers disposed on opposite sidewalls of the second S/D region. A height of the first pair of spacers is greater than a height of the second pair of spacers.