The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Mar. 02, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Shahaji B. More, Hsinchu City, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Some implementations described herein provide a semiconductor device and methods of formation. The semiconductor device may include one or more device types, such as a static random access memory device type, a ring oscillator device type, and/or an input/output device type. A device type may include an n-type metal oxide semiconductor nanostructure transistor and a p-type metal oxide semiconductor nanostructure transistor. In such a case, nanostructure channels of the n-type metal oxide semiconductor nanostructure transistor may have a width that is lesser relative to a width of nanostructure channels of the p-type metal oxide semiconductor nanostructure transistor. Additionally, or alternatively, other properties of the nanostructure transistors, such as a gate length or a width of a source/drain region, may vary based on the device type.