The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
May. 09, 2023
United Microelectronics Corp., Hsin-Chu City, TW;
Chih-Wei Chang, Tainan City, TW;
Yao-Hsien Chung, Kaohsiung City, TW;
Shih-Wei Su, Tainan City, TW;
Hao-Hsuan Chang, Kaohsiung City, TW;
Ting-An Chien, Tainan City, TW;
Bin-Siang Tsai, Changhua County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Abstract
A high electron mobility transistor including a substrate; a channel layer on the substrate; an electron supply layer on the channel layer; a dielectric passivation layer on the electron supply layer; a gate recess in the dielectric passivation layer and the electron supply layer; a surface modification layer on an interior surface of the gate recess; and a P-type GaN layer in the gate recess and on the surface modification layer. The surface modification layer has a gradient silicon concentration.