The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Jun. 06, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Wen-Tzu Chen, Taoyuan city, TW;
Shih-Cheng Chou, Hsinchu City, TW;
Hsiang-Ku Shen, Hsinchu City, TW;
Dian-Hau Chen, Hsinchu, TW;
Chen-Chiu Huang, Taichung City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a first electrode layer over a substrate. The method includes forming a capacitor dielectric layer over the first electrode layer and the substrate. The method includes depositing a second electrode layer over the capacitor dielectric layer. The method includes bombarding the second electrode layer with ions of an inert gas to sputter first atoms from the second electrode layer. The treated second electrode layer has a treated first top portion, a treated first sidewall portion, and a treated first bottom portion. The treated first sidewall portion is over the sidewall of the first electrode layer and connected between the treated first top portion and the treated first bottom portion, and the treated first sidewall portion is thicker than the first sidewall portion.