Semiconductor device, method of fabricating semiconductor device, and semiconductor structure having semiconductor device

Abstract

The present disclosure provides a semiconductor device. The semiconductor device includes a plurality of doped regions located in a substrate; a first dielectric layer located on the substrate; a plurality of first contacts and second contacts located in the first dielectric layer and connected to the plurality of doped regions; a second dielectric layer located on the first dielectric layer; a memory element located in the second dielectric layer, the memory element being electrically connected to the second contact; and a plurality of conductive interconnects located in the second dielectric layer. The conductive interconnects being electrically connected to the plurality of first contacts, and a top surface of the conductive interconnects being at a same level as a top surface of the memory element. A method of fabricating a semiconductor device, and a semiconductor structure having a semiconductor device are also provided.