The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Jun. 23, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jinseong Heo, Suwon-si, KR;

Taehwan Moon, Suwon-si, KR;

Seunggeol Nam, Suwon-si, KR;

Hyunjae Lee, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 53/20 (2023.01); G11C 11/22 (2006.01); H10B 51/20 (2023.01); H10B 51/30 (2023.01); H10B 53/30 (2023.01);
U.S. Cl.
CPC ...
H10B 53/20 (2023.02); G11C 11/223 (2013.01); H10B 51/20 (2023.02); H10B 51/30 (2023.02); H10B 53/30 (2023.02);
Abstract

Provided is a 3D ferroelectric memory device. The 3D ferroelectric memory device may include a plurality of gate electrodes stacked on a substrate in a first direction; a plurality of ferroelectric layers on the plurality of gate electrodes in a second direction; a plurality of intermediate electrodes on the plurality of ferroelectric layers in the second direction; a first insulating layer between the plurality of gate electrodes and between the plurality of intermediate electrodes; a second insulating layer on the plurality of intermediate electrodes and the first insulating layer; and a channel layer on the second insulating layer.


Find Patent Forward Citations

Loading…