The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Apr. 20, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 51/30 (2023.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 30/69 (2025.01);
U.S. Cl.
CPC ...
H10B 51/30 (2023.02); H10D 30/024 (2025.01); H10D 30/0415 (2025.01); H10D 30/6211 (2025.01); H10D 30/701 (2025.01);
Abstract
Various embodiments of the present disclosure are directed towards an integrated chip including a fin structure extending vertically from a semiconductor substrate. The fin structure continuously extends laterally along a first direction. A ferroelectric memory stack overlies the fin structure and continuously laterally extends along a second direction that is substantially perpendicular to the first direction. The ferroelectric memory stack includes an upper electrode overlying a ferroelectric layer. The ferroelectric layer extends along opposing sidewalls and an upper surface of the fin structure.