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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12660184 B1

PDFFull Text
Date of Patent:
Jun. 16, 2026

Filed:

Jan. 24, 2023

Memory device including composite metal oxide semiconductor channels and methods for forming the same

Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Peter Rabkin, Cupertino, CA (US);

Masaaki Higashitani, Cupertino, CA (US);

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:

THE MARBURY LAW GROUP PLLC

Primary Examiner:

Matthew C Landau

Assistant Examiner:

Halee undefined Cramer

Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01); H10W 20/41 (2026.01); H10W 20/42 (2026.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02); H10W 20/42 (2026.01); H10W 20/435 (2026.01);
Abstract

A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, a memory film located in the memory opening, and a composite metal oxide semiconductor channel containing a first semiconducting metal oxide channel layer having a first band gap and a second semiconducting metal oxide channel layer having a second band gap that is different from the first band gap.

Find Patent Forward Citations

Rabkin, Peter. (2026). Memory device including composite metal oxide semiconductor channels and methods for forming the same (U.S. Patent No. 12660184). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12660184

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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