The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Nov. 10, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Si-Woo Lee, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H10W 20/20 (2026.01); H10W 90/20 (2026.01);
U.S. Cl.
CPC ...
H10B 12/30 (2023.02); H10B 12/03 (2023.02); H10B 12/05 (2023.02); H10B 12/482 (2023.02); H10B 12/50 (2023.02); H10W 20/20 (2026.01); H10W 90/297 (2026.01);
Abstract

A microelectronic device comprises vertical stacks of memory cells, each of the vertical stacks of memory cells comprising a vertical stack of access devices, a vertical stack of capacitors horizontally neighboring the vertical stack of access devices, and a conductive pillar structure in contact with the vertical stack of access devices. The microelectronic device further comprises transistor structures vertically overlying the vertical stacks of memory cells and comprising semiconductive material, and a protective liner material horizontally intervening between the semiconductive material and the conductive pillar structure of each of the vertical stacks of memory cells. Related methods are also described.


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