The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Jan. 04, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Elia Ambrosi, Hsinchu City, TW;

Cheng-Hsien Wu, Hsinchu City, TW;

Xinyu Bao, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 11/1673 (2013.01); G11C 11/1677 (2013.01); G11C 2013/0045 (2013.01);
Abstract

A memory system and an operating method are provided. The memory system comprises a memory array, a control circuit, and a read circuit. The memory array comprises a plurality of cross-point memory cells, and each cross-point memory cell comprises a selector and a memory element coupled in series between both terminals of the cross-point memory cell. The control circuit is coupled to the memory array, and the control circuit is configured to provide at least one read pulse each with an increasing magnitude to a selected cross-point memory cell. The read circuit is coupled to the memory array, and the read circuit is configured to receive a read current flowing through the selected cross-point memory cell and determines whether the read current is greater than a target current.


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