Read for non-volatile memory with reduced current levels

Abstract

Technology is disclosed herein for a storage system and method for reducing current levels while maintaining performance during a sensing operation. While initially ramping up and subsequently discharging the bias level on a selected word line, a selected bit line is set to float to thereby reduce current levels. The word line is then biased at a read voltage for a data state and, after being allowed to settle, the selected memory cell is sensed by determining the current though the selected memory cell. To improve performance, when the word line is biased at the read voltage, a voltage spike or kick is applied to selected bit line, after which it is biased at bit line sensing voltage while the selected word line settles and sensing occurs.