The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
May. 21, 2024
Sandisk Technologies, Inc., Milpitas, CA (US);
Albert Bor Kai Chen, Milpitas, CA (US);
Jiahui Yuan, Fremont, CA (US);
Sarath Puthenthermadam, San Jose, CA (US);
Sandisk Technologies, Inc., Milpitas, CA (US);
Abstract
Technology for dynamically updating read references levels in NAND memory. A memory system compensates for both cross-temperature (TempX) effects and data retention (DR) effects. The Vt of a NAND memory cell transistor may depend on the temperature, which leads to the TempX effect. The DR effect is due to a change in charge in the memory cell between programming and sensing. The memory system senses a group of memory cells at two Vt distributions to determine a shift in each Vt distribution. One of the Vt distribution may exhibit a greater shift due to the TempX effect than the DR effect. The other Vt distribution may exhibit a greater shift due to the DR effect than the TempX effect. The memory system determines one or more read level offsets based on both the first shift and the second shift.