The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2026

Filed:

Apr. 08, 2022
Applicant:

Winbond Electronics Corp., Taichung City, TW;

Inventors:

Hsin-Hung Chou, Taichung City, TW;

Kao-Tsair Tsai, Taichung City, TW;

Assignee:

WINBOND ELECTRONICS CORP., Taichung City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/43 (2026.01); H10P 50/00 (2026.01); H10P 50/26 (2026.01); H10W 20/00 (2026.01);
U.S. Cl.
CPC ...
H10W 20/43 (2026.01); H10P 50/264 (2026.01); H10P 50/71 (2026.01); H10W 20/067 (2026.01);
Abstract

A method includes: forming a patterned dielectric layer, including a predetermined word line region and a predetermined pick-up neck region being separated by a first distance, and the patterned dielectric layer within the predetermined pick-up neck region has a second distance, wherein the first distance is smaller than or equal to the second distance; forming a spacer on sidewalls of the patterned dielectric layer; cutting off the spacer of a connecting portion of the predetermined word line region from the spacer of a remaining portion of the predetermined word line region; forming a mask pattern, including a first portion across the connecting portion and the predetermined pick-up neck region, wherein the spacer at the remaining portion is spaced apart from the first portion; and forming a dummy structure, word lines, and pick-up necks, wherein the dummy structure is located between the word lines and the pick-up necks.


Find Patent Forward Citations

Chou, Hsin-Hung. (2026). Semiconductor device and method forming the same (U.S. Patent No. 12653024). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12653024

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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