Methods for fabricating 3d memory devices and structures with memory arrays and metal layers

Abstract

A method for fabricating a semiconductor device comprising: forming a first level; disposing a second level on top of the first level; disposing a third level on top of the second level; forming a via connection through the second level and the third level, where the first level comprises first transistors, at least four independently controlled first memory arrays, and first filled holes therein, where the second level comprises second memory arrays and second filled holes therein, where disposing the third level comprises third transistors, a plurality of third memory arrays, and at least one metal layer therein; disposing a fourth level on top of the third level, where the fourth level comprises fourth transistors and at least one SRAM memory array therein; and bonding the fourth level to the third level via metal-to-metal bonding regions.