The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2026

Filed:

Sep. 02, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sungkun Kang, Hwaseong-si, KR;

Chawon Koh, Yongin-si, KR;

Hyunjae Lee, Hwaseong-si, KR;

Tsunehiro Nishi, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 76/40 (2026.01); G03F 7/004 (2006.01); H01J 37/32 (2006.01); H10P 50/28 (2026.01); H10P 76/20 (2026.01);
U.S. Cl.
CPC ...
H10P 76/40 (2026.01); G03F 7/0044 (2013.01); H01J 37/3244 (2013.01); H10P 50/283 (2026.01); H10P 76/204 (2026.01);
Abstract

A method of manufacturing a semiconductor device, the method including forming a lower film on a substrate; forming a metal-containing photoresist material film on the lower film; patterning the metal-containing photoresist material film to form a photoresist pattern including openings therein such that a scum remains on the lower film; performing a descum operation to remove the scum from the lower film; and etching the lower film using the photoresist pattern, wherein performing the descum operation includes providing the substrate to a processing chamber; generating oxygen plasma; and reacting the scum with the oxygen plasma.


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