The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Jun. 13, 2023
Applicant:
Asm Ip Holding, B.v., Almere, NL;
Inventors:
Jihee Jeon, Leuven, BE;
Timothee Blanquart, Oud-Heverlee, BE;
Viljami Pore, Helsinki, FI;
Charles Dezelah, Helsinki, FI;
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01J 37/32 (2006.01); H10P 14/60 (2026.01); H10P 14/692 (2026.01);
U.S. Cl.
CPC ...
H10P 14/6339 (2026.01); C23C 16/401 (2013.01); C23C 16/4554 (2013.01); C23C 16/45553 (2013.01); H01J 37/32357 (2013.01); H10P 14/6336 (2026.01); H10P 14/6684 (2026.01); H10P 14/69215 (2026.01); H10P 14/6922 (2026.01); H01J 2237/2001 (2013.01); H01J 2237/332 (2013.01);
Abstract
Disclosed are methods and systems for forming a silicon-containing layer on a substrate. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a silicon precursor pulse that comprises exposing the substrate to a silicon precursor. The silicon precursor comprises silicon and one or more of a group 13 element and a group 15 element. A deposition cycle further comprises a plasma pulse that comprises exposing the substrate to a plasma treatment. The plasma treatment comprises generating a plasma.