The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Mar. 03, 2023
Aeluma, Inc., Goleta, CA (US);
Bei Shi, Goleta, CA (US);
Jonathan Klamkin, Goleta, CA (US);
Simone Suran Brunelli, Goleta, CA (US);
Bowen Song, Goleta, CA (US);
Aeluma, Inc., Goleta, CA (US);
Abstract
A method and device for a sensor using a selectively transparent buffer material. The method includes forming a buffer region overlying a silicon substrate, and forming a wavelength configuring material overlying the buffer region. This wavelength configuring material can be configured for non-absorption of a selected wavelength range via plurality of material regions having at least alternating first and second material compositions. The material compositions can include InP, InGaAs, GaAs, GaP, InGaAsP, InAs, InAlAs, InAlGaAs, InGaP, or the like. These materials can also include strained layer superlattice (SLS) or strained interlayer (SIL) materials as dislocation filter layers. Device materials; including at least an n-type contact region, an absorption region, one or more band transition region, a p-type spacer region, and a p-type contact region; can be formed overlying the wavelength configuring material. The resulting device can include mesa-type or planar-type devices and can be configured for backside or topside illumination.